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2SC5250 NTMFS493 RF1172 08140 05DRDG3S ISL6406 10200 JANSR2
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 Power Transistors
2SC3871
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
0.70.1 10.00.2 5.50.2 2.70.2 4.20.2
Unit: mm
4.20.2
s Features
q q q q
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw (TC=25C)
Ratings 500 500 400 7 20 10 5 45 2 150 -55 to +150 Unit V V V V A A A W C C
7.50.2
16.70.3
3.10.1
4.0
1.40.1
1.30.2
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg
14.00.5
0.5 +0.2 -0.1 0.80.1
2.540.25 5.080.5 1 2 3
1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
(TC=25C)
Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 500V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 5A IC = 5A, IB = 1A IC = 5A, IB = 1A VCE = 10V, IC = 0.5A, f = 10MHz IC = 5A, IB1 = 1A, IB2 = -2A, VCC = 150V 25 0.7 2 0.3 400 15 8 1 1.5 V V MHz s s s min typ max 100 100 Unit A A V
1
Power Transistors
PC -- Ta
80 10 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=2.0W) (1) IB=1000mA 8 TC=25C
2SC3871
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=5 30 10 3 1 0.3 0.1 T =-25C C 0.03 0.01 0.01 0.03 100C
VCE(sat) -- IC
Collector power dissipation PC (W)
70 60 50 40 30 20 10 0 0 20 40 (2) (3)
Collector current IC (A)
600mA 500mA 450mA 400mA 350mA 300mA 250mA 200mA 150mA 100mA 50mA
6
25C
4
2
0 60 80 100 120 140 160 0 2 4 6 8 10 12
0.1
0.3
1
3
10
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) -- IC
100 10000 IC/IB=5
hFE -- IC
1000 VCE=5V 300 100 30 10 3 1 0.3 0.1 0.01 0.03
fT -- IC
VCE=10V f=10MHz TC=25C
Base to emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 25C -25C TC=100C
1000 300 100 TC=100C 30 10 3 1 0.01 0.03 -25C 25C
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Transition frequency fT (MHz)
30
3000
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Cob -- VCB
10000 100 IE=0 f=1MHz TC=25C 30
ton, tstg, tf -- IC
Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=-IB2) VCC=150V TC=25C tstg
Area of safe operation (ASO)
100 30 ICP IC 10ms 3 DC 1 0.3 0.1 0.03 0.01 Non repetitive pulse TC=25C t=0.5ms 1ms
Collector output capacitance Cob (pF)
3000 1000 300 100 30 10 3 1 0.1
Switching time ton,tstg,tf (s)
Collector current IC (A)
5
10 3 1 0.3 0.1 0.03 0.01 tf ton
10
0.3
1
3
10
30
100
0
1
2
3
4
1
3
10
30
100
300
1000
Collector to base voltage VCB (V)
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
Power Transistors
Area of safe operation, reverse bias ASO
40 35 Lcoil=200H IC/IB=5 (2IB1=-IB2) TC=25C Clamped
2SC3871
Reverse bias ASO measuring circuit
L coil IB1 Vin T.U.T IC
Collector current IC (A)
30 25 20 15 10 5 0 0 ICP
-IB2
VCC
tW
Vclamp
100 200 300 400 500 600 700 800
Collector to emitter voltage VCE (V)
Rth(t) -- t
102 (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink (1)
Thermal resistance Rth(t) (C/W)
10
(2)
1
10-1
10-2 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
3


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